• image of Транзистор – биполярный (BJT) – массив – с предварительным смещением>NSVMUN5333DW1T3G
  • image of Транзистор – биполярный (BJT) – массив – с предварительным смещением>NSVMUN5333DW1T3G
NSVMUN5333DW1T3G
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
onsemi
TRANS PREBIAS N
-
Tape & Reel (TR)
1898
-

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image of Транзистор – биполярный (BJT) – массив – с предварительным смещением>NSVMUN5333DW1T3G
image of Транзистор – биполярный (BJT) – массив – с предварительным смещением>NSVMUN5333DW1T3G
NSVMUN5333DW1T3G
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
onsemi
TRANS PREBIAS N
-
Tape & Reel (TR)
1898
-
TYPEDESCRIPTION
Mfronsemi
Series-
PackageTape & Reel (TR)
Product StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
Base Product NumberNSVMUN5333

008613590108500

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